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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2380-2384

Investigation of initial growth process of GaN film on sapphire using computational chemistry

(7) Onozu, Takayuki a Inaba, Yusaku a Takami, Seiichi a Kubo, Momoji a Miyamoto, Akira a Iyechika, Yasushi b Maeda, Takayoshi b

a TOHOKU UNIVERSITY (Japan)

b SUMITOMO CHEMICAL CO LTD (Japan)

Author keywords

Density functional theory; GaN; Heterointerface; Molecular dynamics method; Sapphire

Indexed keywords

CARRIER MOBILITY; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; NUMERICAL ANALYSIS; PROBABILITY DENSITY FUNCTION; SAPPHIRE;

COMPUTATIONAL CHEMISTRY; GALLIUM NITRIDE; HETEROINTERFACE; INTERATOMIC INTERACTION; MOLECULAR DYNAMICS SIMULATION; PERIODIC DENSITY FUNCTIONAL CALCULATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033726455 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2380 Document Type: Article

Times cited : (3)

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