Photoluminescence and photoluminescence excitation mechanisms for porous silicon and silicon oxynitride

Materials Research Society Symposium - Proceedings

Volumn 588, Issue , 2000, Pages 141-146

  Liu, Xingsheng ^a   Calata, Jesus Noel ^a   Liang, Houyun ^b   Shi, Wangzhou ^b   Lin, Xuanyin ^b   Lin, Kuixun ^b   Qin, G G ^c  

^a Virginia Polytechnic Institute and State University   (United States)

^b SHANTOU UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; NITROGEN; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS SILICON; QUANTUM THEORY; SILANES; SPECTRUM ANALYSIS; TEMPERATURE;

ELECTRON HOLE PAIRS; NANOMETER SILICON PARTICLES; PHOTOEXCITATION PROCESS; PHOTOLUMINESCENCE EXCITATION MECHANISMS; QUANTUM CONFINEMENT LUMINESCENCE CENTER MODEL; RADIATIVE RECOMBINATION; SILICON OXYNITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033719975     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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