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Applied Physics Letters

Volumn 69, Issue 1, 1996, Pages 4-6

Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

(6) Li, A P a Zhang, Lidong a Zhang, Y X a Qin, G G a,b Wang, Xin c Hu, X W c

a PEKING UNIVERSITY (China)

b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

c Natl Ctr Optoelectron Technol (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; GOLD; NITROGEN; SILICON NITRIDE; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

FORWARD BIAS; HOLES; LUMINESCENCE CENTERS; NITROLIZATION;

MIS DEVICES;

EID: 0030197172 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118115 Document Type: Article

Times cited : (17)

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