Surface morphology and electrical properties of boron-doped diamond films synthesized by microwave-assisted chemical vapor deposition using trimethylboron on diamond (100) substrate

Diamond and Related Materials

Volumn 9, Issue 7, 2000, Pages 1362-1368

  Tsubota, T ^a   Fukui, T ^a   Saito, T ^a   Kusakabe, K ^a   Morooka, S ^a   Maeda, H ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Boron; Chemical vapor deposition; Diamond; Pre treatment

Indexed keywords

BORON COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGEN; METHANE; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SURFACES; SYNTHESIS (CHEMICAL);

HALL MOBILITY; HOLE CONCENTRATION; MICROWAVE ASSISTED CHEMICAL VAPOR DEPOSITION; TRIMETHYLBORON;

DIAMOND FILMS;

EID: 0033716402     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00254-5     Document Type: Article

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