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Volumn 16, Issue 1, 1998, Pages 286-291

Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001543994     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (19)

References (9)
  • 1
    • 11644259662 scopus 로고    scopus 로고
    • National Technology Roadmap for Semiconductors, Semiconductor Industries Association 1994
    • National Technology Roadmap for Semiconductors, Semiconductor Industries Association 1994.
  • 3
    • 11644310065 scopus 로고    scopus 로고
    • J. England, L. Joyce, C. Burgess, S. Moffatt, M. Foad, D. Armour, and M. Current, Ref. 2, p. 470
    • J. England, L. Joyce, C. Burgess, S. Moffatt, M. Foad, D. Armour, and M. Current, Ref. 2, p. 470.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.