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Volumn 16, Issue 1, 1998, Pages 286-291
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Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0001543994
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (19)
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References (9)
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