Simplified distribution base resistance model in selfaligned bipolar transistors

IEICE Transactions on Electronics

Volumn E79-C, Issue 2, 1996, Pages 165-171

  Tanabe, Masamichi ^a   Shimamoto, Hiromi ^a   Onai, Takahiro ^a   Washiot, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Base resistance; Parasitic base resistance; Self aligned bipolar transistor; Spreading resistance

Indexed keywords

CURRENT DENSITY; ELECTRODES; RESISTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

BASE RESISTANCE; PARASITIC BASE RESISTANCE; SELF ALIGNED BIPOLAR TRANSISTOR; SHEET RESISTANCES; SPREADING RESISTANCE; TRANSISTOR GEOMETRY;

BIPOLAR TRANSISTORS;

EID: 0030083435     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. J. R. Hauser, "The effects of distributed base potential on the current injection density and effective base resistance for stripe transistor geometries," IEEE Trans. Electron Devices, vol. ED-11, pp. 238-242, 1964.
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4. H.M. Rein, "Base spreading resistance of square-emitter transistors and its dependence on current crowding," IEEE Trans. Electron Devices, vol. 36, no. 4, pp. 770773, 1989.
5. M. Tanabe, T. Onai, H. Shimamoto, and K. Washio, " Test structure and simplified distribution model for identification of base resistance components in selfaligned polysilicon base electrode bipolar transistors," Proc. of ICMTS, pp. 121-125, 1995.
6. T. Shiba, Y. Tamaki, T. Onai, M. Saitoh, T. Küre, F. Murai, and T. Nakamura, "SPOTEC-A sub 10 //m2 bipolar transistor structure using fully self-aligned sidewall polyside base technology," IEDM Tech. Dig., pp. 455-458, 1991.
7. T. Onai, E. Ohue Y. Idei, M. Tanabe, H. Shimamoto, K. Washio, and T. Nakamura, "An NPN 30 GHz, PNP 32 GHz /r complementary bipolar technology," IEDM Tech. Dig., pp. 63-66, 1993.
8. A. B. Philips, "TRANSISTOR ENGINEERING," pp. 211-216, Robert E. Krieger Publishing Company.