Effect of oxygen plasma on the electrical characteristics of GaAs MESFETs

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 447-450

  Kumar, Vipan ^a   Baby, Aji ^a   Dhanavantri, C ^a   Singh, J K ^a   Singh, B R ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ION BOMBARDMENT; OXYGEN; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE;

CHANNEL RESISTANCE; DRIFT MOBILITY; OXYGEN PLASMA; SATURATION CURRENT;

MESFET DEVICES;

EID: 0034159404     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00248-8     Document Type: Article

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