Di ferroelectric properties of bismuth based layered ferroelectric films for application to non-volatile memories

IEICE Transactions on Electronics

Volumn E81-C, Issue 4, 1998, Pages 566-570

  Tabata, Hitoshi ^a   Yanagita, Takeshi ^a   Kawai, Tomoji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Bi base layer structured ferroelectrics laser ablation; Dielectric constant; Feram; Ferroelectric thin film; Non volatile memory

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; FERROELECTRIC MATERIALS; FERROELECTRICITY; LASER ABLATION; METALLIC SUPERLATTICES; NONVOLATILE STORAGE; PERMITTIVITY; PEROVSKITE; PULSED LASER APPLICATIONS;

FERROELECTRIC THIN FILMS; PULSED LASER DEPOSITION;

DIELECTRIC FILMS;

EID: 0032046810     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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