Etching of silicon nitride in CCl2F2, CHF3, SiF4, and SF6 reactive plasma: A comparative study

Plasma Chemistry and Plasma Processing

Volumn 19, Issue 4, 1999, Pages 545-563

  Pant, B D ^a   Tandon, U S ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Anisotropy; Etch characteristics; Isolation; Selectivity; Trench

Indexed keywords

EID: 0033467745     PISSN: 02724324     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021886511288     Document Type: Article

References (51)

1. M. K. Mazumder, K. Kobayashi, Tamotsu Ogata, J. Mitsuhashi, Y. Mashiko, and H. Koyama, J. Electrochem. Soc. 143, 368 (1996).
2. R. A. Colclaser, Microelectronic Processing and Device Design (Academic Press, NY, 1980), p. 47.
3. Yue Kuo, J. Electrochem. Soc. 142, 186 (1995).
4. U. S. Tandon, B. D. Pant, and Ashok Kumar, Vacuum 42, 1219 (1991).
5. K. Nojiri, K. Tsunokuni, K. Horibe, K. Ito, and S. Kishino, Extended Abstr. I7th Conf. Solid State Devices Mater. p. 337 (1985).
6. K. Shiozawa, T. Oishi, H. Maeda, T. Murakami, K. Yasumura, Y. Abe, and Y. Tokuda, J. Electrochem Soc. 145, 1684 (1998).
7. V. K. Dwivedi, J. Electrochem Soc. 137, 2586 (1990).
8. S. Deleonibus, P. Molle, L. Tosti, and M. C. Taccusel, J. Electrochem. Soc. 138, 3739 (1991).
9. D. C. Gray, J. W. Butterbaugh, C. F. Hiatt, A. S. Lawing, and H. H. Sawin, J. Electrochem. Soc. 142, 3919 (1995).
10. S. S. Cooperman, A. I. Nasi, and G. J. Grula, J. Electrochem. Soc. 142, 3180 (1995).
11. W. Grynkewich, T. H. Fednyshyn, and R. H. Dumas, J. Vac. Sci. Technol. B 8, 5 (1990).
12. Haselden, P. Peavy, B. Eliscon, and T. Ahmed, Proc. SPIE-Intern. Soc. Opt. Eng. 115, 1185(1990).
13. A. Jacob, U. S. Patent 3,795,557 (1974).
14. H. M. Sanders, J. Dieleman, H. J. B. Peters, and J. A. M. Sanders, J. Electrochem, Soc. 129, 2559 (1983).
15. Field, D. F. Klenperer, and I. T. Wade, J. Vac. Sci. Technol. B 6, 551 (1988).
16. C. J. Mogab, A. C. Adams, and D. L. Flamm, J. Appl. Phys. Lett. 49, 3796 (1978).
17. G. Smolinsky and D. L. Flamm, J. Appl. Phys. 50, 982 (1979).
18. Y. Zhang, G. S. Oehrlein, G. M. W. Kroesen, M. Mittmer, and Stein, J. Electrochem. Soc. 140, 1439 (1993).
19. B. E. E. Kastenmeir, P. J. Matsuo, and G. S. Oehrlein, J. Vac. Sci. Technol. A 14, 2802 (1996).
20. G. W. Grykewich, T. H. Fedynyshyn, and R. H. Dumas, J. Vac. Sci. Technol. B 8, 5 (1990).
21. L. M. Ephrath, J. Electrochem. Soc. 126, 1419 (1979).
22. Ho-Jun Lee, Joong Kyun Kim, Jung Hun Kim, and Ki-Woong Whang Jeong Jeong Ho Kim, and Jung Hoon Joo, J. Vac. Sci. Technol. B 16, 500 (1998).
23. Histaka Hayashi, Kazuaki Kurihara, and Makoto Sekine, Jpn. J. Appl. Phys. 35, 2488 (1996).
24. Ying Zhang, G. S. Oehrlein, and F. H. Bell, J. Vac. Sci. Technol. A 14, 2127 (1996).
25. H. Toyoda, M. Tobinaga, and H. Komiya, Jpn. J Appl Phys. 20, 681 (1981).
26. D. H. G. Choe, C. Knapp, and A. Jacob, Solid State Technol. 27, 177 (1984).
27. T. K. S. Wong and S. G. Ingram, J. Vac. Sci. Technol. B 10, 2393 (1992).
28. A. M. Barklund and H. O. Blom, J. Vac. Sci. Technol. A 11, 1226 (1993).
29. Y. X. Li, M. Laros, P. M. Sarro, P. J. French, and R. F. Wolffenbuttel, Microelectr. Eng. 20, 321 (1993).
30. P. E. Riley, B. N. Defonseka, J. C. Sum, and D. Figueredo, IEEE Trans. Semicond. Manuf. 6, 290 (1993).
31. Ying Wang and L. Luo, J. Vac. Sci. Technol. A. 16, 1582 (1998).
32. D. E. Ibbotson, J. A. Mucha, D. L. Flamm, and J. M. Cook, Appl. Phys. Lett 46, 794 (1985).
33. Barkanic, D. M. Reynolds, R. J. Jaccodine, H. G. Stenger, J. Parks, and M. Vedage, Solid State Technol. 32, 109 (1989).
34. H. Boyd and M. S. Tang, Solid State Technol. 22, 133 (1979).
35. E. P. G. T. van de Ven and P. A. Zijlstra, Proc. Electrochem. Soc. 81, 112 (1981).
36. J. W. Couburn, J. Plasma Chem. Plasma Process. 2, 1 (1982).
37. B. Gorowitz and R. J. Saia, VLSI Electronics, Vol 8, Series Editor G. Norman, ed. (Academic Press, Orlando, Florida, 1984), p. 298.
38. P. E. Riley and D. A. Hanson, J. Vac. Sci. Technol. B 7, 1352 (1989).
39. P. H. Singer, Semicond Intern. 12, 68 (1988).
40. P. H. Singer, Semicond Intern. 10, 98 (1986).
41. H. W. Lehman and R. Widmer, J. Vac. Sci. Technol. 15, 319 (1978).
42. M. J. Vacile and F. A. Stevie, J. Appl. Phys. 53, 3799 (1982).
43. D. W. Hess and R. C. Bruce, in Dry Etching for Microelectronics, R. A. Powell, ed. (Elsevier, Amsterdam, 1984), p. 8.
44. D. L. Flamm, Plasma Etching: An Introduction, D. M. Manos and D. L. Flamm, eds, (Academic Press, San Diego, CA, 1989), p. 165.
45. B. E. E. Kastenmeir, P. J. Matsuo, and G. S. Oehrlein, and J. G. Langan J. Vac. Sci. Technol. A 16, 2047 (1998).
46. Hayasaka, H. Okana, and Y. Horiike, Solid State Technol. 31, 127 (1988).
47. J. Dulak, B. J. Howard, and C. Steinbruchel, J. Vac. Sci. Technol. A 9, 775 (1991).
48. B. E. Thompson and H. H. Sawin, J. Electrochem. Soc. 133, 1886 (1986).
49. K. M. Eisele, J. Electrochem. Soc. 128, 123 (1981).
50. R. Legtenberg, H. Janson, M. de Boerl and M. Elwenspoek, J. Electrochem. Soc. 142, 2020 (1995).
51. A. Burtsev, Y. X. Li, H. W. Ziezl, and C. I. M. Beenakker, Microelectr. Eng. 40, 85 (1998).