Conduction and charge-trapping characteristics of MOS capacitors with oxidized nitride films of different nitride thicknesses under positive stress bias

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 368-373

  Mazumder, Motaharul K ^a   Kobayashi, K ^a   Ogata, Tamotsu ^a   Mitsuhashi, J ^a   Mashiko, Y ^a   Koyama, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITORS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRODES; ELECTRONS; GATES (TRANSISTOR); INTERFACES (MATERIALS); NITRIDES; STRESSES; THICK FILMS; THIN FILMS;

CHARGE TRAPPING; GATE VOLTAGE; MOS CAPACITORS; OXIDIZED NITRIDE FILMS; POSITIVE STRESS BIAS;

MOS DEVICES;

EID: 0029759796     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836439     Document Type: Article

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