Low Pressure Chemical Vapor Deposition of Thin Film GeO2-SiO2 Glasses

Journal of the Electrochemical Society

Volumn 137, Issue 4, 1990, Pages 1288-1296

  Rastani, Siroos ^a   Reisman, Arnold ^a,b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS--REACTION KINETICS; FILMS--CHEMICAL VAPOR DEPOSITION; GERMANIUM COMPOUNDS; SILICA;

GERMANIA-SILICA GLASSES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

GLASS;

EID: 0025418030     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2086650     Document Type: Article

References (11)

1. W. Kern and G. L. Schnable, RCA Rev., 43, 423 (1982).
2. J. E. Tong, K. Schertenleib, and R. A. Carpio, Solid State Technol., 161 (Jan. 1984).
3. W. I. Lehrer, U.S. Pat. 4, 417, 914 (1983).
4. W. Kern and R. S. Rosier, J. Vac. Sci. Technol., 14, 1082 (1977).
5. R. H. Dalton, U.S. Pat. 3,542,572 (1970).
6. A. Reisman, L. M. Mack, and P. K. Bhattacharya, Journal of the Electrochemical Society, 136, 3433 (1989).
7. S. M. Sze, “VLSI Technology,” McGraw-Hill Inc., New York (1988).
8. A. C. Adams, D. P. Schinke, and C. D. Capio, Journal of the Electrochemical Society, 126, 1539 (1979).
9. Pieter Stroeve, “Integrated Circuits: Chemical and Physical Processing,” American Chemical Society, p. 189, Washington, DC (1985).
10. W. Kern and R. K. Smeltzer, Solid State Technol., 28, 171 (1985).
11. W. A. Pliskin, J. Vac. Sci. Technol., 14, 1064 (1977).