Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1848-1853

  Mathewt, Suraj J ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNEL LEAKAGE; LEAKAGE MECHANISM; SILICON GERMANIUM; TRAPPING MECHANISM;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; FIELD EFFECT TRANSISTORS; GAMMA RAYS; INTERFACES (MATERIALS); IRRADIATION; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON SAPPHIRE TECHNOLOGY;

RADIATION EFFECTS;

EID: 0033351818     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819164     Document Type: Article

References (14)

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