Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 130-131

  Mathew, Suraj J ^a   Ansley, William E ^a   Dubbelday, Wadad B ^a   Cressler, John D ^a   Ott, John ^a   Chu, Jack O ^a   Meyerson, Bernard S ^a   Kavanagh, Karen L ^a   Mooney, Patricia M ^a   Lagnado, Isaac ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

SAPPHIRE TECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 0030659277     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)