Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques

Applied Physics Letters

Volumn 34, Issue 1, 1979, Pages 76-78

  Lau, S S ^a   Matteson, S ^a   Mayer, J W ^a   Revesz, P ^b   Gyulai, J ^b   Roth, J ^c   Sigmon, T W ^d   Cass, T ^e  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

^d STANFORD UNIVERSITY   (United States)

^e HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013416496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.90564     Document Type: Article

References (0)