Transient photocurrents in SOS structures

IEEE Transactions on Nuclear Science

Volumn 20, Issue 6, 1973, Pages 315-318

  Kjar, R A ^a   Kinoshita, G ^a  

^a Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS - IRRADIATION;

SOS STRUCTURES;

TRANSISTORS;

EID: 0015770574     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1973.4327413     Document Type: Article

References (5)

1. R. A. Kjar, et al, Hardened MOS Circuitry, Volumes I & II, AFAL TR-71-143, Electronics Group, A Division of Rockwell International, August 1971, Vol I (Unclassified), Vol II (Secret).
2. J. W. Harrity, IEEE Transactions on Nuclear Science, NS-17, Pg 206, December 1970.
3. J. W. Harrity, Radiation Effects in Dielectric Material, (U), GA-9801, Gulf General Atomic Inc, December 1969.
4. V. A. J. Van Lint, et al, IEEE Transactions on Nuclear Science, NS-15, Pg 194, December 1968.
5. N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals, Second Edition, Pg 122, Dover Publications, New York (1948).