Modeling of radiation-induced leakage currents in CMOS/SOI devices

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1276-1281

  Garcia, G A ^b   Smeltzer, R K ^a  

^a SARNOFF CORPORATION   (United States)

^b Naval Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS--ELECTRIC PROPERTIES;

BACK CHANNEL CONDUCTION;

INTEGRATED CIRCUITS, CMOS;

EID: 0026400388     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124105     Document Type: Article

References (7)

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2. A. C. Ipri, “The Properties of Silicon-On-Sapphire Substrates, Devices, and Integrated Circuits,” in Applied Solid State Science, Supplement 2, Part A, edited by D. Kahng, (1981).
3. E. Preuss and H. Schlötterer, “Silicon-On-Sapphire Devices: Realisation, Properties and Applications,” Inst. Phys. Conf. Ser., No. 40, (1978).
4. P. V. Dressendorfer, “Radiation Effects on MOS Devices and Circuits,” in Ionizing Radiation Effects in MOS Devices & Circuits, edited by T. P. Ma and P. V. Dressendorfer, John Wiley & Sons, 1989.
5. R. Rios, R. K. Smeltzer, R. Amantea, and A. Rothwarf “A Three-Dimensional Device Simulator for Radiation-Hard MOS-SOI Transistors,” Solid-State Electronics, vol. 34, no. 8, pp. 853–859, 1991.
6. R. Rios, R. Amantea, R. K. Smeltzer, and A. Rothwarf, “A Strategy for Efficient 3-D Simulations of MOS-SOI Devices,” in Proceedings of the NASECODE VII Conference, edited by J. J. H. Miller, Copper Mountain, Colorado, April 1991, pp. 154–156.
7. R. Rios, “A Three-Dimensional Device Simulator for the Analysis of the MOS-SOS Edge Parasitic Transistor,” PhD dissertation, Drexel University (1990).