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Volumn 40, Issue 4, 1999, Pages 388-392

Nanometer Electron Beam lithography

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR WEIGHT; NANOTECHNOLOGY; POLYSTYRENES;

EID: 0033340091     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (13)
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    • Ohnishi, Y.1
  • 8
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    • Ultrahigh resolution of calixarene negative resist in electron beam lithography
    • J. Fujita, et al., "Ultrahigh Resolution of Calixarene Negative Resist in Electron Beam Lithography," Appl. Phys. Lett., 68, pp. 1297-1299, 1996.
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    • Fujita, J.1
  • 9
    • 0031162845 scopus 로고    scopus 로고
    • Resolution-limit study of chain-structure negative resist by electron beam lithography
    • S. Manako, et al., "Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography," Jpn. J. Appl. Phys., 36, pp. L724-L726, 1997.
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  • 10
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    • S. Manako, et al., "Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650," Jpn. J. Appl. Phys., 37, pp. 6785-6787, 1998.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.