Accurate nano-EB lithography for 40-nm gate MOSFETs

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 415-418

  Ochiai, Y ^a   Manako, S ^a   Samukawa, S ^a   Takeuchi, K ^a   Yamamoto, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRIC CURRENTS; ETCHING; GATES (TRANSISTOR); MASKS; MOSFET DEVICES; NANOTECHNOLOGY; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICALLY AMPLIFIED RESIST; GAUSSIAN BEAM; NANOMETER ELECTRON BEAM LITHOGRAPHY; POLYSILICON GATE MOSFET; PROXIMITY EFFECT; THERMAL FIELD EMITTER;

ELECTRON BEAM LITHOGRAPHY;

EID: 0029771239     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00276-6     Document Type: Article

References (9)

1. Y. Taur et al: IEDM93 Technical Digest, p.127.
2. K.F. Lee et al: ibid. p.131.
3. M. Ono et al: ibid. p.119.
4. K. Takeuchi et al.: 1995 Symp. VLSI Tech. p.9.
5. A. Claßen et al. M.E. 17(1992)21.
6. Y. Ochiai et al: Jpn. J. Appl. Phys. 30 (1991)3266.
7. S. Samukawa et al: J. Vac. Sci. Technol. B12(6)(1994)3300.
8. S. Manako et al: Jpn. J. Appl. Phys. 33(1994)6993.
9. T. Azuma et al, Jpn. J. Appl. Phys. 30(1991)3138.