Study on the properties of interlayer low dielectric polyimide during Cl-based plasma etching of aluminum

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7122-7125

  Kim, Sang Hoon ^a   Moon, Ho Sung ^a   Woo, Sang Gyun ^a   Ahn, Jinho ^a  

^a Hanyang University   (South Korea)

Author keywords

Aluminum; Dielectric constant; Electron cyclotron resonance; Etching; Leakage current density; Low dielectric polyimide; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON RESONANCE; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ETCHING; SULFUR COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SULFUR HEXAFLUORIDE;

POLYIMIDES;

EID: 0033333196     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7122     Document Type: Article

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