Characterization of stable fluorine-doped silicon oxide film prepared by biased helicon plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2526-2529

  Tamura, Takahiro ^a   Inoue, Youichi ^a   Satoh, Makoto ^a   Yoshitaka, Hikaru ^a   Sakai, Junro ^a  

^a Canon ANELVA Technix Corporation   (Japan)

Author keywords

Biased helicon plasma CVD; F Si F bond; Fluorine doped silicon oxide; Si F bond; Stability; Water absorption

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HELICONS; MASS SPECTROMETRY; OXIDES; OXYGEN; PLASMA STABILITY; SILICON COMPOUNDS; WATER ABSORPTION;

SILICON OXIDE; SILICON TETRAFLUORIDE; THERMAL DESORPTION MASS SPECTROSCOPY SPECTRA;

THIN FILMS;

EID: 0030122939     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2526     Document Type: Article

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