Pregate Oxidation Treatment using Radio Frequency Activated Nitrogen in a Rapid Thermal Reactor

Journal of the Electrochemical Society

Volumn 146, Issue 2, 1999, Pages 707-709

  Wong, Man ^a   Ho, Wai Hung ^a   Yeung, Milton ^a   Chin, Gen ^a   Chan, Philip C H ^a   Zohar, Yitshak ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; MOSFET DEVICES; NITRIDING; NITROGEN; OXIDATION; REACTION KINETICS;

PREGATE OXIDATION TREATMENT; RAPID THERMAL REACTOR;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033077223     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391667     Document Type: Article

References (7)

1. X. Zhang, T. Zhang, M. Wong, and Y. Zohar, Sens. Actuators A, 64, 109 (1998).
2. H. Hwang, W. Ting, D. L. Kwong, and J. Lee, Tech. Dig. Int. Electron Devices Meet., 421 (1990).
3. H. Fang, K. S. Krisch, B. J. Gross, C. G. Sodini, J. Chung, and D. A. Antoniadis, Electron Device Lett., EDL-13, 217 (1992).
4. A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi, and S. Ohno, Tech. Dig. Int. Electron Devices Meet., 425 (1990).
5. L. K. Han, D. Wristers J. Yan, M. Bhat, and D. L. Kwong, Electron Device Lett., EDL-16, 319 (1995).
6. Y. H. Lin, C. S. Lai, C. L. Lee, T. F. Lei, and T. S. Chao, Trans. Electron Devices. 43, 1161 (1996).
7. C. T. Liu, Y. Ma, H. Luftman, and S. J. Hillenius, Electnm Device Lett., EDL-18, 212 (1997).