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0028699696
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Vol. 41,pp. 2389-2395, 1994.
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R.A. Reed, PJ. McNulty, W.J. Beauvais, W.O. AbdelKader, E.G. Stassinopoulos, J.C.L. EarthA Simple Algorithm for Predicting Protons SEU Rates in Space Compared to the Fates Measured on the CRRES Satellite, IEEE Trans. Nucl. Sei., Vol. 41,pp. 2389-2395, 1994.
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A Simple Algorithm for Predicting Protons SEU Rates in Space Compared to the Fates Measured on the CRRES Satellite, IEEE Trans. Nucl. Sei.
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Reed, R.A.1
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Abdelkader, W.O.4
Stassinopoulos, E.G.5
Earth, J.C.L.6
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P.W. Marshall, C.J. Marshall, M. D'Ordine, M. Carts, O. Lum, H.S. Kim, C.M. Seidleck, T. Poweü, R. Abbot, J. Barth, E.G. Stassinopoulos Vol. 44,pp. 1885-1892, 1997.
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K.A. LaBel, P.W. Marshall, C.J. Marshall, M. D'Ordine, M. Carts, O. Lum, H.S. Kim, C.M. Seidleck, T. Poweü, R. Abbot, J. Barth, E.G. Stassinopoulos,"Proton Induced Transients in Opto couplers: In-Flight Anomalies, Ground Irradiation Test, itigation and Implications, IEEE Trans. Nucl. Sei., Vol. 44,pp. 1885-1892, 1997.
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Proton Induced Transients in Opto Couplers: In-Flight Anomalies, Ground Irradiation Test, Itigation and Implications, IEEE Trans. Nucl. Sei.
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Label, K.A.1
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Vol. 31,pp. 1201-1205, 1984.
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W.L Bendel, and E.L. PetersenPredicting Single Event Upsets in the Earth's Proton Belts, IEEE Trans. Nucl. Sei., Vol. 31,pp. 1201-1205, 1984.
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Predicting Single Event Upsets in the Earth's Proton Belts, IEEE Trans. Nucl. Sei.
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Bendel, W.L.1
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Method: Importance of the Elastic Scattering Mechanism, Vol. 44,pp. 22432249, 1997.
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Method: Importance of the Elastic Scattering Mechanism, IEEE Trans. Nucl. Sei., Vol. 44,pp. 22432249, 1997.
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IEEE Trans. Nucl. Sei.
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97pp. 570575, 1997.
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P.J. McNulty, M.W. Savage, D.R. Roth, C.C. FosterProton SEU Rate Predictions, RADECS 97pp. 570575, 1997.
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Proton SEU Rate Predictions, RADECS
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McNulty, P.J.1
Savage, M.W.2
Roth, D.R.3
Foster, C.C.4
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Vol. 19, Nos.1-4, pp. 929-938,1991.
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P.J. McNulty, D.R. Roth, W.J Beauvais, W.G. AbdelKader, D.C. DingheComparison of th ChargeCollecting Properties of Junctions and the SEU Responce of Microelectronic Circuits, Int. J. Radiât. Instrum., Part D, Nucl. Tracks and Radiât. Meas., Vol. 19, Nos.1-4, pp. 929-938,1991.
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Comparison of Th ChargeCollecting Properties of Junctions and the SEU Responce of Microelectronic Circuits, Int. J. Radiât. Instrum., Part D, Nucl. Tracks and Radiât. Meas.
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McNulty, P.J.1
Roth, D.R.2
Beauvais, W.J.3
Abdelkader, W.G.4
Dinghe, D.C.5
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Vol. 38,pp. 1463-1470, 1991.
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P.J. McNulty, W.J. Beauvais, D.R. RothDetermination of SEU Parameters of NMOS and CMOS SRAMS, IEEE Trans. Nucl. Sei., Vol. 38,pp. 1463-1470, 1991.
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Determination of SEU Parameters of NMOS and CMOS SRAMS, IEEE Trans. Nucl. Sei.
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McNulty, P.J.1
Beauvais, W.J.2
Roth, D.R.3
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Vol. 40,pp. 1876-1884, 1993.
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R.A. Reed, P.J. McNulty, W.J. BeauvaisCharge Collection Spectroscopy, IEEE Trans. Nucl. Sei., Vol. 40,pp. 1876-1884, 1993.
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Charge Collection Spectroscopy, IEEE Trans. Nucl. Sei.
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Reed, R.A.1
McNulty, P.J.2
Beauvais, W.J.3
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0024171214
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256K Static RAMs and Comparisons of Upset Induced by Heavy Ions and Protons, IEEE Trans. Nucl. Sei., Vol.35, pp. 16381643, 1988.
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R. Koga, W.A. Kolasinski, J.V. Osborn, J.H. Elder, R. ChittySEU Test Techniques for 256K Static RAMs and Comparisons of Upset Induced by Heavy Ions and Protons, IEEE Trans. Nucl. Sei., Vol.35, pp. 16381643, 1988.
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SEU Test Techniques for
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Koga, R.1
Kolasinski, W.A.2
Osborn, J.V.3
Elder, J.H.4
Chitty, R.5
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0027841916
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Vol 40,pp. 1721-1724, 1993.
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D.R. Roth, P.J. McNulty, W.O. Abdel-Kader, L. Strauss, and E.G. StassinopoulosMonitoring SEU Parameters at Reduced Bias, IEEE Trans. Nucl. Sei., Vol 40,pp. 1721-1724, 1993.
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Monitoring SEU Parameters at Reduced Bias, IEEE Trans. Nucl. Sei.
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Roth, D.R.1
McNulty, P.J.2
Abdel-Kader, W.O.3
Strauss, L.4
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Vol. 43pp. 2820-2826, 1996.
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J. Barak, J. Levinson, M. Victoria, W. HajdasDirect Processes in the Energy Deposition of Protons in Silicon, IEEE Trans. Nucl. Sei., Vol. 43pp. 2820-2826, 1996.
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Direct Processes in the Energy Deposition of Protons in Silicon, IEEE Trans. Nucl. Sei.
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Barak, J.1
Levinson, J.2
Victoria, M.3
Hajdas, W.4
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0028699689
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Vol. 41 pp. 2049-2054,1994.
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R.A. Reed, P.J. McNulty, W.G. Abdel-KaderImplications of Angle of Incidence in SEU Testing of Modern Circuits, IEEE Trans. Nucl. Sei., Vol. 41 pp. 2049-2054,1994.
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Implications of Angle of Incidence in SEU Testing of Modern Circuits, IEEE Trans. Nucl. Sei.
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Reed, R.A.1
McNulty, P.J.2
Abdel-Kader, W.G.3
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