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Applied Physics A: Materials Science and Processing

Volumn 69, Issue 6, 1999, Pages 631-635

Yellow luminescence from precipitates in GaN epilayers

(2) Kang, J a Ogawa, T b

a XIAMEN UNIVERSITY (China)

b GAKUSHUIN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033321302 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390051044 Document Type: Article

Times cited : (9)

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