Modeling of dopant diffusion in silicon

IEICE Transactions on Electronics

Volumn E82-C, Issue 6, 1999, Pages 800-811

  Dunham, Scott T ^a,b   Gencer, Alp H ^a   Chakravarthi, Srinivasan ^a  

^a Boston University   (United States)

^b BOSTON UNIVERSITY   (United States)

Author keywords

Coupled diffusion; Diffusivity; Dopant diffusion; Dopant defect pairing; Equilibrium concentration; Interstitial; Lattice Monte Carlo; Metal diffusion; Pair diffusion; Point defects; Silicon; Vacancy

Indexed keywords

DIFFUSION IN SOLIDS; FITS AND TOLERANCES; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; MONTE CARLO METHODS; PARTIAL DIFFERENTIAL EQUATIONS; POINT DEFECTS; SEMICONDUCTING SILICON;

DEFECT MEDIATED DIFFUSION; DOPANT DIFFUSION; EQUILIBRIUM CONCENTRATION; LATTICE MONTE CARLO; METAL DIFFUSION;

SEMICONDUCTOR DOPING;

EID: 0033321192     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (92)

1. M. Yoshida, Jap. J. Appl. Phys., vol.18, p.479, 1979.
2. M. Yoshida, Jap. J. Appl. Phys., vol.22, p.1404, 1983.
3. D. Mathiot and J.C. Pfister, J. Appl. Phys., vol.53, p.3035, 1982.
4. D. Mathiot and J.C. Pfister, J. Appl. Phys., vol.55, p.3518, 1984.
5. S.T. Dunham, J. Eloctrochem. Soc., vol.139, p.2628, 1992.
6. [G] S.M. Hu and S. Schmidt, J. Appl. Phys., vol.39, p.4273, 19C8.
7. P.M. Fahey, P.B. Griffin, and J.D. Plummer, Rev. Mod. Phys., vol.61, p.289, 1989.
8. S.M. Hu, Phys. Rev., vol.180, p.773, 1969.
9. D. Mathiot and J.C. Pfister, J. Phys. Lett., vol.43, p.L-453, 1982.
10. D. Mathiot and J.C. Pfister, J. Appl. Phys., vol.66, p.1970, 1989.
11. A. Nylandsted Larsen, K. Kyllesbech Larsen, P.E. Andersen, and B.C. Svensson, J. Appl. Phys., vol.73, p.691, 1993.
12. S.T. Dunham and C.D. Wu, NUPAD V Proceedings, p.101, 1994.
13. S.T. Dunham and C.D. Wu, J. Appl. Phys., vol.78, p.2362, 1995.
14. S.T. Dunham and C.D. Wu, in Simulation of Semiconductor Devices and Processes (SISDEP/SISPAD'95), H. Ryssel, ed., Springer-Verlag, Wien, Austria, pp.476-479, 1995.
15. M. Hirata, M. Hirata, and H. Saito, J. Phys. Soc. Jap., vol.27, p-405, 1969.
16. J.S. Nelson, private communication.
17. O. Pankratov, private communication.
18. [18J R.B. Fair, in Impurity Doping Processes in Silicon, F. F. Y. Yang, ed., North-Holland, New York, p.315, 1981.
19. P. Fahey, G. Barbuscia, M. Moslehi, and R.W. Dutton, Appl. Phys. Lett., vol.43, p.G83, 1983.
20. H.-J. Gossmann, T.E. Haynes, P.A. Stolk, D.C. Jacobson, G.H. Gilmer, J.M. Poate, U.S. Luftman, T.K. Mogi, and M.O. Thompson, Appl. Phys. Lett., vol.71, p.3862, 1997.
21. R.M. Harris and D.A. Antoniadis, Appl. Phys. Lett., vol.43, p.937, 1983.
22. P. Fahey, R.W. Dutton, and S.M. Hu, Appl. Phys. Lett., vol.44, p.777, 1984.
23. C.L. Claeys, G.L. Declerk, and R.J. Van Overstraeten, in Semiconductor Characterization Techniques, P.A. Barnes and G.A. Rozgonyi, eds., Electrochem. Soc., Pennington, NJ, p.366, 1978.
24. K. Nishi and D.A. Antoniadis, J. Appl. Phys., vol.59, p.1117, 1986.
25. S.T. Dunham, in 1993 International Workshop on VLSI Process and Device Modeling (VPAD 1993), K. Asada, ed., Japan, pp.46-49, 1993.
26. S.T. Dunham and P.P. Wittel, in Process Physics and Modeling in Semiconductor Technology, G.R. Srinivasan, C.S. Murthy and S.T. Dunham, eds., Electrochem. Soc. Proc., vol.96-4, Pennington, NJ, pp.27-36, 1996.
27. S. Matsumoto, M. Yoshida, and T. Niimi, Jap. J. Appl. Phys., vol.13, p.1899, 1974.
28. M.D. Giles, IEEE Trans. CAD, vol.8, p.460, 1989.
29. B. Garben, W.A. Orr-Arienzo, and R.F. Lever, J. Electrochem. Soc., vol.133, p.2152, 1986.
30. U. Gosele and T.Y. Tan, in Defects in Semiconductors II, S. Mahajan and J. W. Corbett, eds., North-Holland, New York, p.45, 1983.
31. F. Morehead, in Defects in Electronic Materials, ed., M. Stavola, S. J. Pearton and G. Davies, Mat. Soc. Proc., vol.104, Pittsburgh, PA, p.99, 1987.
32. W. Taylor and U. Gösele, in Process Physics and Mod-eling in Semiconductor Technology, G. R. Srinivasan, K. Taniguchi and C. S. Murthy, eds., Electrochem. Soc. Proc., vol.93-6, Pennington, NJ, pp.108-119, 1993.
33. H. Bracht, N.A. Stolwijk, and H. Mehrer, Phys. Rev. B, vol.52, p.16542, 1995.
34. F. Morehead, in Defects in Electronic Materials, M. Stavola, S. J. Pearton and G. Davies, eds., Mat. Soc. Proc., vol.104, Pittsburgh, PA, pp.99-104, 1988.
35. H. Zimmermann and H. Rysscl, J. Electrochem. Soc., vol.139, p.256, 1992.
36. U. Gösclc, A. Plo/31, and T.Y. Tan, Electrochemical Soc. Proc., vol.96-4, p.309, 1996.
37. P.B. Griffin, S.T. Ahn, W.A. Tillor, and J.D. Plummer, Appl. Phys. Lett., vol.51, p.115, 1987.
38. S.T. Ahn, J.D. Shott, and W.A. Tiller, Proc. Electrochemical Society Meeting, Oct. 1986.
39. S.T. Ahn, PhD thesis, Stanford University, Sept. 1988.
40. E. Scheid and P. Chenevier, Physica Status Solidi, vol.93, p.523, 1986.
41. K. Taniguchi and D.A. Antoniadis, Appl. Phys. Lett., vol.42, p.961, 1983.
42. M. Budil, M. Heinrich, M. Schrems, and H. Potzl, J. Electrochem. Soc., vol.137, p.3931, 1990.
43. P.B. Griffin and J.D. Plummer, Proc. Electrochem. Soc. Fall 1996 Meeting, Oct. 1986.
44. P.B. Griffin, PhD thesis, Stanford University, Dec. 1989.
45. K. Taniguchi and D.A. Antoniadis, Appl. Phys. Lett., vol.46, p.944, 1985.
46. A.M. Lin, R.W. Dutton, and D.A. Antoniadis, Appl. Phys. Lett., vol.35, p.799, 1979.
47. S. Mizuo and H. Higuchi, Jap. J. Appl. Phys., vol.21, p.272, 1982.
48. P.B. Griffin, P.M. Fahey, J.D. Plummer, and R.W. Dutton, Appl. Phys. Lett., vol.47, p.319, 1985.
49. A.M. Agarwal and S.T. Dunham, Appl. Phys. Lett., vol.63, p.800, 1993.
50. G.B. Bronner and J.D. Plummer, Mat. Res. Soc. Symp. Proc., vol.36, p.49, 1985.
51. T.Y. Tan and U. Gosele, Appl. Phys. A, vol.37, p.l, 1985.
52. N.A. Stolwijk, B. Schuster, and J. Holzl, Appl. Phys. A, vol.33, p.133, 1984.
53. S. Mantovani, F. Nava, C. Nobili, and G. Ottaviani, Phys. Rev. B, vol.33, p.5536, 1986.
54. Y. Bar-Yam and J.D. Joannopoulos, Phys. Rev. Lett., vol.52, p.1129, 1984.
55. O.S. Nichols, G.G. Van de Walle, and S.T. Pantelides, Phys. Rev. B, vol.40, p.5484, 1989.
56. J. Zhu, T. Diaz de la Rubia, L.H. Yang, C. Mailhiot, and G.H. Gilmer, Phys. Rev. B, vol.54, p.4741, 1996; J. Zhu, personal communication.
57. M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B, vol.55, p. 14279, 1997.
58. H.-J. Gossmann, P.A. Stolk, D.J. Eaglesham, C.S. Rafferty, and J.M. Poate, Appl. Phys. Lett., vol.67, p.3135, 1995.
59. P. Burggraaf, Semi. Int., vol.7, p.54, 1990.
60. C.S. Rafferty, M.D. Giles, H.-H. Vuong, S.A. Eshraghi, M.R. Pinto, and S.J. Hillenius, 1993 International Workshop on VLSI Process and Device Modeling (VPAD 1993), K. Asada, ed., Japan, pp. 148-149, 1993.
61. C.S. Rafferty, S.A. Eshraghi, M.R. Pinto, S.J. Hillenius, and H.-H. Vuong, #12.6 IEDM 1993 Proceedings.
62. S. Crowder, P.B. Griffin, and J.D. Plummer, in Proc-ess Physics and Modeling in Semiconductor Technology, G.R. Srinivasan, K. Taniguchi and C.S. Murthy, eds., Elec.trochem. Soc. Proc., vol.93-6, Pennington, NJ, pp.108-119, 1993.
63. S.T. Dunham, J. Appl. Phys., vol.71, p.685, 1992.
64. A.M. Agarwal and S.T. Dunham, J. Appl. Phys., vol.78, p.5313, 1995.
65. S.T. Dunham and J.D. Plummer, J. Appl. Phys., vol.57, p.2541, 1986.
66. S.T. Dunham, in Second Intl. Symp. on ULSI Science and Tech., C.M. Osburn and J. Andrews, eds., Electrochem. Soc. Proc.89-9, Pennington, NJ, 1989.
67. G.K. Celler and L.E. Trimble, Appl. Phys. Lett., vol.54, p.1427, 1989.
68. S.T. Dunham and A.M. Agarwal, in ULSI Science and Technology, E.M. Middlesworth and H.Z. Massoud, eds., Elec-trochem. Soc. Proc., Pennington, NJ, 1995.
69. H. Zimmermann and H. Ryssel, Appl. Phys. A, vol.55, p.121, 1992.
70. S. Chakravarthi and S.T. Dunham, in Defects and Diffusion in Silicon Processing, S. Coffa, T. de la Rubia, C. Rafferty, and P. Stolk, eds., Mat. Res. Soc. Proc., Pittsburgh, PA, 1997.
71. M. D. Giles, J. Electrochem. Soc., vol.138, p.1160, 1991.
72. O. Vancauwenberghe, N. Herbots, and O. Hellman, J. Vac. Sei. Tech. B, vol.9, p.2027, 1991.
73. L.A. Christel, J.F. Gibbons, and T.W. Sigmon, J. Appl. Phys., vol.52, p.7143, 1981.
74. P.A. Packan, PhD thesis, Stanford University, Feb. 1991.
75. N.E.B. Cowern, K.T.F. Janssen, and H.F.F. Jos, J. Appl. Phys., vol.68, p.6191, 1990.
76. N.E.B. Cowern, G.F.A. van de Walle, P.C. Zalm, and D.W.E. Vandenhoudt, J. Appl. Phys., vol.65, p.2981, 1994.
77. D.R. Lim, O.S. Rafferty, and F.P. Klemens, Appl. Phys. Lett., vol.67, p.2302, 1995.
78. S.T. Dunham, I. Clejan, and A.H. Gencer, Mat. Sei. Eng. A, vol.238, p.152, 1997.
79. S.T. Dunham, J. Electrochem. Soc., vol.142, p.2823, 1995.
80. S.T. Dunham, in Silicon Materials Science & Technology, H. Huff, W. Bergholz, and K. Sumino, eds., Electrochem. Soc. Proc., Pennington, NJ, p.711, 1994.
81. D.J. Eaglesham, P.A. Stolk, H.J. Gossmann, and J.M. Poate, Appl. Phys. Lett., vol.65, p.2305, 1997.
82. A.H. Gencer and S.T. Dunham, J. Appl. Phys., vol.81, p.631, 1997.
83. U.S. Chao, PhD thesis, Stanford University, July 1997.
84. G.Z. Pan and K.N. Tu, J. Appl. Phys., vol.82, p.601, 1997.
85. D.J. Eaglesham, P.A. Stolk, H.J. Gossmann, T.E. Haynes, and J.M. Poate, Nuc. Inst. and Meth. B, vol.106, p.191, 1995.
86. G.Z. Pan, K.N. Tu, and S. Prussin, Appl. Phys. Lett., vol.68, p.1654, 1996.
87. J. Lui, M.E. Law and K.S. Jones, Solid State Electron., vol.38, p. 1305, 1995.
88. A.D. Lilak, S.K. Earles, K.S. Jones, M.E. Law, and M.D. Giles, in IEDM Technical Digest, IEEE, p.493, 1997.
89. J. Zhu, M. J. Caturla, M. Johnson, and T.D. de la Rubia, private communication.
90. M.D. Giles et al., TED SIMS data from Intel Corporation.
91. M.J. Caturla, M.D. Johnson, and T. Diaz de la Rubia, Appl. Phys. Lett., vol.72, p.2736, 1998.
92. S. Chakravarthi and S.T. Dunham, in Simulation of Semiconductor Processes and Devices (SISPAD'98).