Implantation and transient B diffusion in Si: The source of the interstitials

Applied Physics Letters

Volumn 65, Issue 18, 1994, Pages 2305-2307

  Eaglesham, D J ^a   Stolk, P A ^a   Gossmann, H J ^a   Poate, J M ^a  

^a LUCENT TECHNOLOGIES   (United States)

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EID: 21544480068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112725     Document Type: Article

References (21)