SFM characterization of SrBi2Ta2O9 thin films for nanoscale memory applications

Integrated Ferroelectrics

Volumn 27, Issue 1, 1999, Pages 159-169

  Gruverman, A ^a   Hironaka, K ^a   Ikeda, Y ^a   Satyalakshmi, K M ^b   Pignolet, A ^b   Alexe, M ^b   Zakharov, N D ^b   Hesse, D ^b  

^a SONY CORPORATION   (Japan)

^b Max Planck Inst fur M   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; FERROELECTRIC MATERIALS; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; PEROVSKITE; PULSED LASER APPLICATIONS; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS;

DOMAIN STRUCTURES; NANOSCALE MEMORY; REMNANT POLARIZATION; SCANNING FORCE MICROSCOPY; STRONTIUM BARIUM TANTALUM OXIDES;

THIN FILMS;

EID: 0033315126     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908228465     Document Type: Article

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