Characteristics of PZT thin films as ultra-high density recording media

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 319-327

  Hidaka, T ^a   Maruyama, T ^a   Sakai, I ^a   Saitoh, M ^a   Wills, L A ^a   Hiskes, R ^a   Dicarolis, S A ^a   Amano, Jun ^a   Foster, C M ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Ferroelectrics; Polarization domain; PZT; Recording density; Retention; Switching speed

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FILM GROWTH; LEAD COMPOUNDS; MATHEMATICAL MODELS; PIEZOELECTRICITY; POLARIZATION; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ARRHENIUS MODEL; LEAD ZIRCONATE TITANATE;

DIELECTRIC FILMS;

EID: 0031339294     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013006     Document Type: Article

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