Vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity, using a novel gate dielectric approach

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 19-22

  Verheyen, P ^a   Collaert, N ^a   Caymax, M ^a   Loo, R ^a   De Meyer, K ^a   Van Rossum, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HETEROJUNCTIONS; INTERFACES (MATERIALS); OXIDATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

GATE DIELECTRIC; SHORT CHANNEL EFFECTS; SOURCE CHANNEL INTERFACE;

MOSFET DEVICES;

EID: 0032599257     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)