Nucleation and growth mechanisms during MBE of III-V compounds

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 67, Issue 1, 1999, Pages 7-16

  Joyce, B A ^a   Vvedensky, D D ^a   Bell, G R ^a   Belk, J G ^a   Itoh, M ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISSOCIATION; MONTE CARLO METHODS; NUCLEATION; RATE CONSTANTS; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DISSOCIATION PATHWAYS; MOBILE PRECURSOR STATE; STRAIN RELAXATION; SURFACE RECONSTRUCTION;

EPITAXIAL GROWTH;

EID: 0033283646     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00203-2     Document Type: Article

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