Surface morphology during strain relaxation in the growth of InAs on GaAs(110)

Surface Science

Volumn 410, Issue 1, 1998, Pages 82-98

  Belk, J G ^a   Pashley, D W ^a   McConville, C F ^a,b   Joyce, B A ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Diffusion and migration; Epitaxy; Gallium arsenide; Indium arsenide; Low index single crystal surfaces; Molecular beam epitaxy (MBE); Nucleation; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

LOW INDEX SINGLE CRYSTAL SURFACES; MORPHOLOGICAL CHANGES; SURFACE MORPHOLOGY;

SURFACE PHENOMENA;

EID: 0032119562     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00300-8     Document Type: Article

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