Formation and migration energies of interstitials in silicon under strain conditions

Surface Science

Volumn 441, Issue 2-3, 1999, Pages 265-269

  Halicioglu, T ^a   Barnett, D M ^b  

^a NASA AMES RESEARCH CENTER   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; NUCLEATION; POINT DEFECTS; STRAIN; SURFACE PHENOMENA; TEMPERATURE;

MOLECULAR STATICS METHOD; STILLINGER-WEBER MODEL; SURFACE DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0033225285     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00721-9     Document Type: Article

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