Studies of morphological instability and dislocation formation in heteroepitaxial Si1-xGex thin films via controlled annealing experiments

Materials Research Society Symposium - Proceedings

Volumn 440, Issue , 1997, Pages 323-328

  Ozkan, Cengiz S ^a   Nix, William D ^a   Gao, Huajian ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS; THIN FILMS;

HETEROEPITAXIAL GROWTH; LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0031332978     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)