Effect of pressure on boron diffusion in silicon

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 305-310

  Zhao, Yuechao ^a   Aziz, Michael J ^a   Mitha, Salman ^a   Schiferl, David ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BORON; CALCULATIONS; DIFFUSION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MOLECULES; POINT DEFECTS; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY;

ACTIVATION VOLUME;

SEMICONDUCTING SILICON;

EID: 0030685176     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)