Effect of x-ray irradiation on the electrical characteristics of ultra-thin gate oxides

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 741-746

  Houssa, M ^a   De Gendt, S ^a   De Bokx, P ^b   Mertens, P W ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; IRRADIATION; LEAKAGE CURRENTS; MOS CAPACITORS; OXIDES; PROBABILITY; X RAYS;

OXYNITRIDE LAYERS; TUNNELING CURRENT; ULTRA THIN GATE OXIDES; X RAY IRRADIATION;

ULTRATHIN FILMS;

EID: 0033190056     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/301     Document Type: Article

References (25)

1. McLean F B 1980 IEEE Trans. Nucl. Sci. 27 1651
2. Kenkare P U and Lyon S A 1989 Appl. Phys. Lett. 55 2328
3. Mrstik B J and Rendell R W 1991 IEEE Trans. Nucl. Sci. 38 1101
4. Lenahan P M and Conley J F 1997 Appl. Phys. Lett. 71 3126
5. Ristic G S, Pejovic M M and Jaksic A 1998 J. Appl. Phys. 83 2994
6. Afanas'ev V V, de Nijs J M M, Stesmans A and Balk P 1995 Microelectron. Eng. 28 43
7. Brunner T 1997 IEDM Tech. Dig. p 9
8. Smith H I and Cerrina F 1997 Microlithogr. World (Winter) p 10
9. Longo R, Chaloux S, Chen A, Krasnoperova A, Lee S, Murphy G, Thomas A, Wasik C, Weybright M and Bronner G 1998 VLSI Tech. Dig. 82
10. Meuris M, Mertens P W, Opdebeeck A, Schmidt H F, Depas M, Vereecke G, Heyns M M and Philipossian A 1995 Solid State Technol. 109
11. Okada Y, Tobin P J, Lakhotia V, Ajceria S A, Hedge R J, Liao J C, Rushbrook P P and Arias L J 1993 J. Electrochem. Soc. 140 L87
12. Deguchi K, Miyoshi K, Ban H, Matsuda T, Ohno T and Kado Y 1995 J. Vac. Sci. Technol. B 13 3040
13. Patel N K and Toriumi A 1994 Appl. Phys. Lett. 64 1809
14. De Blauwe J, Van Houdt J, Wellekens D, Groeseneken G and Maes H 1998 IEEE Trans. Electron Devices 45 1745
15. Riccò B, Gozzi G and Lanzoni M 1998 IEEE Trans. Electron Devices 45 1554
16. Depas M, Vermeire B, Mertens P W, Van Meirhaeghe R L and Heyns M M 1995 Solid-State Electron. 38 1465
17. Wang T, Chang T E, Chiang L P, Zous N K and Huang C 1997 Proc. Int. Reliability Physics Symp. (Denver, CO, 1997) p 164
18. Scarpa A, Paccagnella A, Montera F, Ghibaudo G, Pananakakis G, Ghidini G and Fuochi P G 1997 IEEE Trans. Nucl. Sci. 44 1818
19. Nigam T, Degraeve R, Groeseneken G, Heyns M M and Macs H E 1998 Proc. Int. Reliability Physics Symp. (Reno, NV, 1998) p 62
20. Degraeve R, Groeseneken G, Bellens R, Depas M and Macs H 1995 IEDM Tech. Dig. 863
21. Lee S H, Cho B J, Kim J C and Choi S H 1994 IEDM Tech. Dig. 605
22. Depas M, Nigam T and Heyns M 1996 IEEE Trans. Electron Devices 43 1499
23. Okada K and Taniguchi K 1997 Appl. Phys. Lett. 70 351
24. Houssa M, Nigam T, Mertens P W and Heyns M M 1998 Appl. Phys. Lett. 73 514
25. Houssa M, Nigam T, Mertens P W and Heyns M M 1998 J. Appl. Phys. 84 4351