An improved model for extraction of strongly spatial dependent lifetimes with the ac lifetime profiling technique

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1808-1810

  Daliento, S ^a   Sanseverino, A ^a   Spirito, P ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Charge carrier lifetime

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

LIFETIME PROFILING TECHNIQUE; MINORITY CARRIER;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033169521     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777175     Document Type: Article

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