Combined proton and electron irradiation for improved GTO thyristors

Solid State Electronics

Volumn 32, Issue 11, 1989, Pages 1033-1037

  Hallén, Anders ^a   Bakowski, Mietek ^b  

^a Department of Radiation Sciences ^*  (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS--APPLICATIONS; PROTONS--APPLICATIONS;

GTO THYRISTORS; N-BASE LIFETIME; ON STATE LOSSES; SWITCHING PROPERTIES; TURN OFF LOSSES;

THYRISTORS;

EID: 0024767217     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90167-6     Document Type: Article

References (18)

1. Industry Applications Soc. Ann. Meeting, Conf. record
2. Localized lifetime control in insulated-gate transistors by proton implantation
3. Production of Fast Switching Power Thyristors by Proton Irradiation
4. An MeV-ion implanter for large area applications
5. The influence of gate-metallization potential drop on transient GTO characteristics