Lifetime Control in Silicon Power Devices by Electron or Gamma Irradiation

IEEE Transactions on Electron Devices

Volumn 24, Issue 8, 1977, Pages 1103-1108

  Carlson, Richard O ^a   Sun, Y S ^a   Assalit, Henri B ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0017524019     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1977.18884     Document Type: Article

References (10)

1. J. W. Corbett, Electron Radiation Damage in Semiconductors and Metals. New York: Academic Press, 1966.
2. A. O. Evwaraye and B. J. Baliga, “Identification of the dominant recombination centers in electron-irradiated semiconductor devices,” presented at the Fall Meeting of the Electrochemical Society, Las Vegas, NV, Oct. 1976 (submitted to J. Electrochem. Soc.)
3. P. Rai-Choudhury, J. Bartko, and J. E. Johnson, “Electron irradiation induced recombination centers in silicon-minority carrier lifetime control,” IEEE Trans. Electron Devices, vol. ED-23, pp. 814–818, Aug. 1976.
4. B. J. Baliga and E. Sun, “Lifetime control in power rectifiers and thyristors using gold, platinum and electron irradiation,” in IEEE Int. Electron Devices Meeting, Tech. Dig., pp. 495–498, Dec. 1976. (Accepted for publication in IEEE Trans. Electron Devices.)
5. R. F. Vitman, V. A. Kutlakhmetov, V. P. Reshetin, V. I. Shakhovtsov and V. B. Schumen, “Turn-off times of thyristors subjected to x-ray bombardment,” Sov. Phys. Semicond., vol. 9, pp. 220–221, Aug. 1975.
6. F. W. Gentry, F. W. Gutzwiller, N. Holonyak, Jr., and E. E. Von Zostrow, Semiconductor Controlled Rectifiers. Englewood Cliffs, NJ: Prentice-Hall, 1964.
7. J. W. Corbett and G. D. Watkins, “Production of divacancies and vacancies by electron irradiation of silicon,” Phys. Rev., vol. 138, pp. A555–A560, Apr. 19, 1965.
8. D. V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,” J. Appl. Phys., vol. 45, pp. 3023–3032, July 1974.
9. J. R. Scour, S. Othmer, and K. Y. Chui, “Electron and proton damage coefficients in low resistivity silicon,” IEEE Trans. Nuclear Sci., vol. NS-22, pp. 2656–2662, Dec. 1975.
10. G. C. Messenger, “A two level model for lifetime reduction processes in neutron irradiated silicon and germanium,” IEEE. Trans. Nuclear Sci., vol. NS-14, pp. 88–102, Dec. 1967.