Comparison of Gold, Platinum, and Electron Irradiation for Controlling Lifetime in Power Rectifiers

IEEE Transactions on Electron Devices

Volumn 24, Issue 6, 1977, Pages 685-688

  Jayant Baliga, B ^a   Sun, Edmund ^b  

^a GENERAL ELECTRIC COMPANY   (United States)

^b General Electric Semiconductor Products Department ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0017504430     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1977.18803     Document Type: Article

References (8)

1. T. Matsuzawa and Y. Usunaga, “Some electrical characteristics of a reverse conducting thyristor,” IEEE Trans. Electron Devices, vol. ED-17, p. 816,1970.
2. J. M. Fairfield and B. V. Gokhale, “Control of diffused diode recovery time through gold doping,” Solid-State Electron., vol. 9, pp. 905-907, 1966.
3. M. D. Miller, H. Schade, and C. J. Nuese, “Use of platinum for lifetime control in power devices,” Int. Electron Devices Mtg., Paper 8.7, pp. 180-183,1975.
4. K. S. Tarneja and J. E. Johnson, “Tailoring the recovered charge in power diodes using 2MeV electron irradiation,” Electrochem. Soc. Mtg., Paper 261RNP, 1975.
5. J. M. Fairfield and B. V. Gokhale, “Gold as a recombination center in silicon,” Solid-State Electron., vol. 8, pp. 685-691,1965.
6. W. Zimmerman, “Experimental verification of the Shockley-Read-Hall recombination theory in silicon,” Electron. Lett., vol. 9,1973.
7. K. P. Lisiak and A. G. Milnes, “Platinum as a lifetime control deep impurity in silicon,” J. Appl. Phys., vol. 46, pp. 5229-5235,1975.
8. A. O. Evwaraye and B. J. Baliga, “Identification of the dominant recombination center in electron irradiated n-silicon using DLTS and lifetime measurement,” Electrochem. Soc. Mtg., Oct. 1976.