Two-Dimensional Analysis of a Test Structure for Lifetime Profile Measurements

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1924-1928

  Daliento, Santolo ^a   Rinaldi, Niccolo ^a   Sanseverino, Annunziata ^a   Spirito, Paolo ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRODES; GEOMETRY; SEMICONDUCTING SILICON;

LATERAL DIODE; TEST STRUCTURE; TWO DIMENSIONAL ANALYSIS; TWO DIMENSIONAL EFFECTS; TWO DIMENSIONAL SIMULATION;

ELECTRIC VARIABLES MEASUREMENT;

EID: 0029408516     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469398     Document Type: Article

References (7)

1. P. Spirito and G. Cocorullo, “A measurement technique to obtain the recombination lifetime profile in epi layers at any injection level,” IEEE Trans. Electron Devices, vol. ED-35, pp. 2546-2554, Dec. 1987.
2. D. K. Schroder, Semiconductor Material and Device Characterization. New York: Wiley, 1990.
3. P. Spirito and A. Sanseverino, “Determination of energy levels of recombination centers in low doped Si layers by temperature dependence of recombination lifetime,” Solid-State Electron., vol. 37, no. 7, pp. 1429-1436, 1994.
4. P. Spirito, S. Bellone, C. M. Ransom, G. Busatto, and G. Cocorullo, “Recombination lifetime profiling in very thin Si epitaxial layer used for bipolar VLSI,” IEEE Trans. Electron Device Lett., vol. 10, Jan. 1989.
5. Pisces 2B User's Manual, TMA, Palo Alto, CA, 1991.
6. S. Bellone, G. Cocorullo, N. Rinaldi, and G. F. Vitale, “Analytical model of GaAs BMFET structures,” in GAAS Conf., Torino, 1994.
7. S. Daliento, A. Sanseverino, and P. Spirito, “Measurements of process-dependent lifetime profiles in Si layers for high efficiency solar cells,” in Twelfth EPSEC, Amsterdam, 1994, vol. II, p. 1765.