A Measurement Technique to Obtain the Recombination Lifetime Profile in Epi Layers at Any Injection Level

IEEE Transactions on Electron Devices

Volumn 34, Issue 12, 1987, Pages 2546-2554

  Spirito, Paolo ^a   Ocorullo, Giuseppe ^b  

^a Dipartimento di Elettronica   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939040357     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23347     Document Type: Article

References (13)

1. P. Spirito and G. Cocorullo, “Measurement of recombination lifetime profiles in epilayers using a conductivity modulation technique”, IEEE Trans. Electron Devices, vol. ED-32, no. 9, pp. 1708-1713, 1985.
2. P. L. Hower, “Influence of collector recombination lifetime on the current gain and storage time of high-voltage power transistors” in Lifetime Factors in Silicon, ASTM STP 712, Amer. Soc. Testing and Materials, pp. 47-57, 1980.
3. S. S. Rofail, M. I. Elmasry, and E. L. Heasell, “Functional modeling of integrated injection logic-DC analysis”, IEEE Trans. Electron Devices, vol. ED-24, no. 3, pp. 234-241, 1977.
4. R. W. Cooper et al., “Effects of carrier lifetime and end-region recombination on the forward current and switching behaviour of power PIN diodes”, in Lifetime Factors in Silicon, ASTM STP 712, Amer. Soc. Testing and Materials, pp. 47-57, 1980.
5. S. C. Jain and U. C. Roy, “The effect of built-in field and emitter recombinations on FCVD of a P-N junction diode”, Solid-State Electron., vol. 26, pp. 515-523, 1983.
6. F. N. Gonzales and A. Neugroschel, “Measurement of diffusion length, lifetime, and surface recombination velocity in thin semiconductor layers”, IEEE Trans. Electron Devices, vol. ED-31, pp. 413-416, 1984.
7. W. Shockley and W. T. Read, “Statistic of the recombination of hole:: and electrons”, Phys. Rev., vol. 87, pp. 835-842, 1952.
8. P. Spirito and G. Cocorullo, “A new modulation technique for lifetime measurements in epitaxial layers”, in Proc. 2nd Int. Workshop Physics Semiconductor Devices (Delhi, India, Dec. 5-10, 1983).
9. S. Bellone, A. Caruso, and P. Spirito, “Modello analitico dei diodi P+NN+ alle medie correnti”, Alta Frequenza, vol. 47, pp. 843-860, 1978.
10. P. Chen, K. Misiakos, A. Neugroschel, and F. A. Lindholm, “A-alytical solution for two-dimensional current injection from shallow p-n junctions”, IEEE Trans. Electron Devices, vol. ED-32, pp. 2292-2296, 1985.
11. A. Neugroschel et al., “Diffusion length and lifetime determination in p-n junction solar cells and diodes by forward-biased capacitance measurements”, IEEE Trans. Electron Devices, vol. ED-25, pp. 485-490, 1978.
12. A. Y. Liang and C.J. Varker, “Minority carrier lifetime degradation in silicon due to thermally generated dislocations”, in Lifetime Factors in Silicon, ASTM STP 712, Amer. Soc. Testing and Materials pp. 73-85, 1980.
13. W. Zimmerman, “Experimental verification of the Shockley-Read-Hall recombination theory in silicon”, Electron. Lett., vol. 9, pp 378-379, 1973.