High-power 0.8-μm-band broad-area laser diodes with a decoupled confinement heterostructure

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 1998, Pages 10-

  Oeda, Y ^a   Fujimoto, T ^a   Yamada, Y ^a,a   Shibuya, H ^a   Muro, K ^a  

^a MITSUI CHEMICALS INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MIRRORS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

CATASTROPHIC OPTICAL MIRROR DAMAGE; DECOUPLED CONFINEMENT HETEROSTRUCTURE; LOW PRESSURE METALLORGANIC VAPOR PHASED DEPOSITION;

SEMICONDUCTOR LASERS;

EID: 0031638963     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)