Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1998, Pages 43-44

  Nabiev, R F ^a   Aarik, J ^a   Asonen, H ^a   Bournes, P ^a   Corvini, P ^a   Fang, F ^a   Finander, M ^a   Jansen, M ^a   Nappi, J ^a   Rakennus, K ^a   Salokatve, A ^a  

^a Coherent Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CLADDING (COATING); HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TENSILE STRENGTH; THRESHOLD VOLTAGE;

SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE); TENSILE-STRAINED SINGLE QUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0032319140     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)