High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 1997, Pages 199-200

  Erbert, G ^a   Bugge, F ^a   Oster, A ^a   Sebastian, J ^a   Staske, R ^a   Vogel, K ^a   Wenzel, H ^a   Weyers, M ^a   Traenkle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CONTINUOUS WAVE LASERS; CURRENT DENSITY; HIGH POWER LASERS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

WALLPLUG EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 0031338690     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/leos.1997.645356     Document Type: Conference Paper

References (4)