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Volumn , Issue , 1998, Pages 49-50
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Tensile-strained GaAs1-yPy-AlGaAs quantum well diode lasers emitting between 715 nm and 790 nm
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CLADDING (COATING);
CURRENT DENSITY;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SUBSTRATES;
THRESHOLD VOLTAGE;
THRESHOLD CURRENT DENSITY;
WALL PLUG EFFICIENCY;
QUANTUM WELL LASERS;
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EID: 0032312122
PISSN: 08999406
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (7)
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