Influence of p-doping and waveguide composition on the lasing properties of 630-nm band AlGaInP laser diodes

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 1998, Pages 309-310

  Winterhoff, R ^a   Frey, V ^a   Schlenker, D ^a   Hangleiter, A ^a   Scholz, F ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CLADDING (COATING); DOPING (ADDITIVES); LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

THERMAL CARRIER LEAKAGE; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0031621218     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.1998.676207     Document Type: Conference Paper

References (5)