Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4×4) surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 3065-3069

  Westwood, D I ^a   Woolf, D A ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24644501792     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

1. M. R. Fahy, M. J. Ashwin, J. J. Harris, R. C. Newman, and B. A. Joyce, Appl. Phys. Lett. 61, 1805 (1992).
2. L. Daweritz, K. Hagenstein, and P. Schutzendube, J. Cryst. Growth 127, 1051 (1993).
3. M. Wassermeier, J. Behrend, L. Daweritz, and K. Ploog, Phys. Rev. B 52, R2269 (1995).
4. A. R. Avery, J. Sudijono, D. M. Holmes, T. S. Jones, and B. A. Joyce, Appl. Phys. Lett. 66, 3200 (1995).
5. A. R. Avery, D. M. Holmes, J. L. Sudijono, T. S. Jones, M. R. Fahy, and B. A. Joyce, J. Cryst. Growth 150, 202 (1995).
6. A. H. Levermann, D. A. Woolf, D. I. Westwood, and J. E. Macdonald, Surf. Sci. (in press).
7. D. A. Woolf, K. C. Rose, J. Rumberg, D. I. Westwood, F. Reinhardt, S. J. Morris, W. Richter, and R. H. Williams, Phys. Rev. B 51, 4691 (1995).
8. D. A. Woolf, K. C. Rose, S. J. Morris, D. I. Westwood, J. Rumberg, F. Reinhardt, W. Richter, and R. H. Williams, J. Cryst. Growth 150, 197 (1995).
9. M. Wassermeier, I. Kamiya, D. E. Aspnes, L. T. Florez, J. P. Harbison, and P. M. Petroff, J. Vac. Sci. Technol. B 9, 2263 (1991).
10. I. Kamiya, D. E. Aspnes, L. T. Florez, and J. P. Harbison, Phys. Rev. B 46, 15 894 (1992).
11. H. Tanaka, E. Colas, I. Kamiya, D. E. Aspnes, and R. Bhat, Appl. Phys. Lett. 59, 3443 (1991).
12. S. E. Acosta-Ortiz and A. Lastras-Martinez, Phys. Rev. B 40, 1426 (1989).
13. D. I. Westwood, D. A. Woolf, and R. H. Williams, J. Cryst. Growth 98, 782 (1989).
14. S. Scholz, A. B. Muller, W. Richter, D. R. T. Zahn, D. I. Westwood, D. A. Woolf, and R. H. Williams, J. Vac. Sci. Technol. B 10, 1710 (1992).
15. D. E. Aspnes, J. P. Harbison, A. A. Studna, and L. T. Florez, J. Vac. Sci. Technol. A 6, 1327 (1988).
16. The RAS intensities are a factor of 3.7 lower in this paper than in our previous publications (Refs. 7 and 8) since the correction factor with which the ac/dc signal ratio is multiplied is now set to the theoretical value that comes out of Aspnes et al.'s (Ref. 15) calculation of the signal shape.
17. S. E. Acosta-Ortiz and A. Lastras-Martinez, Solid State Commun. 64, 809 (1987).
18. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
19. Z. Sobiesierski, D. I. Westwood, and M. Elliott (unpublished).
20. M. J. Ashwin, M. Fahy, J. J. Harris, R. C. Newman, D. A. Sansom, R. Addinall, D. S. McPhail, and V. K. M. Sharma, J. Appl. Phys. 73, 633 (1993).