Spectroscopic ellipsometry applied for in-situ control of lattice matched III-V growth in MOVPE

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 496-500

  Trepk, T ^a   Zorn, M ^a   Zettler, J T ^a   Klein, M ^a   Richter, W ^a  

^a NONE

Author keywords

Feedback control; InGaAs InP; Lattice matched growth; Metalorganic vapour phase epitaxy (MOVPE); Spectroscopic ellipsometry (SE)

Indexed keywords

CLOSED LOOP CONTROL SYSTEMS; CRYSTAL LATTICES; ELLIPSOMETRY; FEEDBACK CONTROL; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SIGNAL TO NOISE RATIO; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; STRAIN; X RAY CRYSTALLOGRAPHY;

SEMICONDUCTOR OPTICAL GAP; SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031997482     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00871-7     Document Type: Article

References (7)

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