MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 442-446

  Kurpas, P ^a   Richter, E ^a   Sato, M ^a,b   Brunner, F ^a   Gutsche, D ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030714772     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00621-5     Document Type: Article

References (9)

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