Characteristics of Inversion-Channel and Buried-Channel MOS Devices in 6H-SiC

IEEE Transactions on Electron Devices

Volumn 41, Issue 7, 1994, Pages 1257-1264

  Sheppard, Scott T ^a   Melloch, Michael R ^a   Cooper, James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITORS; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TEMPERATURE MEASUREMENT; THERMOOXIDATION;

BURIED CHANNEL CONTROLLED DIODES; ELECTRON MOBILITY; INVERSION CHANNEL CONTROLLED DIODES; MINORITY CARRIER THERMAL GENERATION RATE;

MOS DEVICES;

EID: 0028465018     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293356     Document Type: Article

References (27)

1. W. v. Münch, “Silicon Carbide,” Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, New Series, group III, vol. 17c, M. Schulz, O. Madelung and H. Weiss, Eds. Berlin: Springer-Verlag, 1984.
2. W. v. Münch and I. Pfaffeneder, “Breakdown field in vapor-grown silicon carbide p-n junctions,” J. of Appl. Phys., vol. 48, no. 11, pp. 4831-4833, 1977.
3. J. B. Petit, P. G. Neudeck, L. G. Matus, and J. A. Powell, in Amorphous and Single Crystal Silicon Carbide IV, Springer Proc. in Physics, vol. 71, C. Y. Yang, M. M. Rahman and G. L. Harris., Eds. Berlin: Springer-Verlag, 1992, pp. 190-196.
4. A. Suzuki, H. Ashida, N. Furui, K. Mameno, and H. Matsunami, “Thermal oxidation of SiC and electrical properties of Al-SiO2-SiC MOS structure,” Jap. J. Appl. Phys., vol. 21, no. 4, pp. 579-585, 1982.
5. S. M. Tang, W. B. Berry, R. Kwor, M. V. Zeller, and L. G. Matus, “High frequency capacitance-voltage characteristics of thermally grown SiO2 films on β-SiC,” J. Electrochem. Soc., vol. 137, no. 1, pp. 221-225, 1990.
6. J. W. Sanders, J. Pan, W. Xie, S. T. Sheppard, M. Mathur, J. A. Cooper, Jr., and M. R. Melloch, presented at the 51st Annu. Device Res. Conf., Santa Barbara, CA, 1993.
7. J. W. Palmour, H. S. Kong, D. G. Waltz, J. A. Edmond, and C. H. Carter, Jr., “6H-silicon carbide transistors for high temperature operation,” in Proc. 1st Int. High Temp. Electronics Conf., Sandia National Labs, Albuquerque, NM, June 1991, pp. 511-518.
8. R. F. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, “Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide,” Proc. IEEE, vol. 79, pp. 677-700, 1991.
9. G. Kelner, S. Binari, M. Shur, K. Sleger, J. Palmour, and H. Kong, “a-SiC buried-gate junction field effect transistors,” Mat. Sci. and Engineering, vol. B11, pp. 121-124, 1992.
10. A. Goetzberger and J. C. Irvin, “Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface state trapping,” IEEE Trans. Electron. Devices, vol. ED-15, pp. 1009-1014, 1968.
11. D. K. Schroder, Semiconductor Material and Device Characterization. New York: Wiley, 1990.
12. A. S. Grove and D. J. Fitzgerald, “Surface effects on p-n junctions: characteristics of surface space-charge regions under nonequilibrium conditions,” Solid-State Electron., no. 9, pp. 783-806, 1966.
13. R. E. Avila, J. J. Kopanski, and C. D. Fung, “Behavior of inversion layers in 3C silicon carbide,” Appl. Phys. Lett., vol. 49, no. 6, pp. 334-336, 1986.
14. C. M. Zetterling and M. Ostling, “Redistribution of aluminum during thermal oxidation of 6H silicon carbide,” presented at the/Int. Conf. on Silicon Carbide and Related Materials, Nov. 1993, Washington, DC.
15. J. W. Palmour, Cree Research, Inc., Durham, NC, private communication.
16. A. M. Mohsen and F. J. Morris, “Measurements on depletion-mode field effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devices,” Solid-State Electron., vol. 18, no. 5, pp. 407-416, 1975.
17. S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., “Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC,” J. Appl. Phys., Mar. 1994.
18. M. J. Van der Tol and S. G. Chamberlain, “Potential and electron distribution model for the buried-channel MOSFET,” IEEE Trans. Electron Devices, vol. 36, pp. 670-689, 1989.
19. A. B. Bhattacharyya, PP. Ratnam, D. Nagchoudhuri, and S. C. Rustagi, “On-line extraction of model parameters of a long buried-channel MOSFET,” IEEE Trans. Electron Devices, vol. ED-32, pp. 545-550, Mar. 1985.
20. R. A. Haken, “Analysis of the deep depletion MOSFET and the use of the DC characteristics for determining bulk-channel charge-coupled device parameters,” Solid-State Electron., vol. 21, pp. 753-761, 1978.
21. G. W. Taylor, “C-V Characteristics of ion implanted depletion IGFET’s and buried channel CCD’s,” Solid-State Electron., vol. 19, pp. 495-503, 1976.
22. D. S. Wu, “Extraction of average doping density and junction depth in an ion-implanted deep-depletion transistor,” IEEE Trans. Electron Devices, vol. ED-27, pp. 995-997, May 1980.
23. R. F. Pierret, Field Effect Devices. Reading, MA: Addison-Wesley, 1990.
24. G. K. Reeves, “Specific contact resistance using a circular transmission line model,” Solid-State Elec., vol. 23, pp. 487-490, 1980.
25. T. Tachibana, H. S. Kong, Y. C. Wang, and R. F. Davis, “Hall measurements as a function of temperature on monocrystalline SiC thir films,” J. Appl. Phys., vol. 67, no. 10, pp. 6375-6381, 1990.
26. J. S. Blakemore, Semiconductor Statistics. New York: Macmillan, 1962.
27. P. A. Ivanov and V. E. Chelnokov, “Recent Developments in SiC single-crystal electronics,” Seniicond. Sci. Technol., vol. 7, pp. 863-880, 1992.