In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Applied Surface Science

Volumn 141, Issue 1-2, 1999, Pages 101-106

  Xu, Huaizhe ^a   Zhou, Wei ^a   Xu, Bo ^a   Jiang, Weihong ^a   Gong, Qian ^a   Ding, Ding ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

68.55.Jk; 78.55.Cr; 81.05.Ea; APN; EL; GaAs (311)B; GD; High index; IC; In x Ga 1 x As self assembly; Molecular beam epitaxy; QBE; Quantum dot array; Surface structure

Indexed keywords

COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; MOLECULAR STRUCTURE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; SURFACE STRUCTURE;

LATERAL ORDERING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033099601     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00605-9     Document Type: Article

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